Enhance the density of silicon carbide with the addition of nitrate-based additives

  • Mudzakkir Dioktyanto University of Indonesia and Nano Center Indonesia
  • Didik Aryanto National Research and Innovation Agency, Research Center for Physics
  • Alfian Noviyanto Nano Center Indonesia
  • Akhmad Herman Yuwono University of Indonesia
  • Nurul Taufiqu Rochman National Research and Innovation Agency
Keywords: Silicon Carbide, Nitrate, Oxide, Additive, Density

Abstract


Dense monolithic silicon carbide (SiC) was successfully sintered by hot-pressing at 1750 °C for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. A relative density more than 99% were obtained with the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, while in the oxide form they were 86.3 and 97.2%, respectively. Indeed, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110 °C, however, the addition of nitrate form of MgO-Y2O3 enhanced the densification greatly. The sintering mechanism in the nitrate-based additive is liquid phase sintering, which is identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering.

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Published
2022/12/23
How to Cite
Dioktyanto, M., Aryanto, D., Noviyanto, A., Yuwono, A. H., & Rochman, N. T. (2022). Enhance the density of silicon carbide with the addition of nitrate-based additives. Journal of Mining and Metallurgy, Section B: Metallurgy, 58(3), 389-395. Retrieved from https://aseestant.ceon.rs/index.php/jmm/article/view/36470
Issue
Vol. 58 No. 3 (2022)
Section
Original Scientific Paper

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